? 2003 ixys all rights reserved not f not f not f not f not f or new design or new design or new design or new design or new design symbol test conditions maximum ratings v dss t j = 25 c to 150 c n07 70 v v dgr t j = 25 c to 150 c; r gs = 1 m ? n06 60 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c; chip capability 200n06/200n07 200 a i l(rms) terminal current limit 100 a i dm t c = 25 c, pulse width limited by t jm 600 a i ar t c = 25 c 100 a e ar t c = 25 c30mj e as t c = 25 c 2j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min - 2500 v~ i isol 1 ma t = 1 s - 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque - 1.5/13 nm/lb.in. weight 30 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma n06 60 v n07 70 v v gs (th) v ds = v gs , i d = 8 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = 0.8 ? v dss t j = 25 c 400 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 6m ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source features z international standard packages z minibloc with aluminium nitride isolation z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance z fast intrinsic rectifier applications z dc-dc converters z synchronous rectification z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z temperature and lighting controls z low voltage relays advantages z easy to mount z space savings z high power density s g s d minibloc, sot-227 b (ixfn) e153432 ds97533b(02/03) hiperfet tm power mosfets n-channel enhancement mode avalanche rated, high dv/dt, low t rr v dss i d25 r ds(on) ixfn 200 n06 60 v 200 a 6 m ? ? ? ? ? ixfn 200 n07 70 v 200 a 6 m ? ? ? ? ? t rr 250 ns
ixys reserves the right to change limits, test conditions, and dimensions. ixfn 200n06 ixfn 200n07 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 60 80 s c iss 9000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 4000 pf c rss 2400 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 ns t d(off) r g = 1 ? (external), 100 ns t f 60 ns q g(on) 480 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 nc q gd 240 nc r thjc minibloc, sot-227 b 0.24 k/w r thck minibloc, sot-227 b 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 200 a i sm repetitive; pulse width limited by t jm 600 a v sd i f = 100 a, v gs = 0 v, 1.7 v pulse test, t 300 s, duty cycle d 2 % t rr 150 250 ns q rm 0.7 c i rm 9a m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g 30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004 minibloc, sot-227 b i f = 25 a -di/dt = 100 a/ s, v r = 50 v
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